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|Title:||Investigation of the use of rotating linearly polarized light for characterizing SiO <inf>2</inf> thin-film on Si substrate|
|Keywords:||Computer Science;Engineering;Materials Science;Physics and Astronomy|
|Citation:||2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011. (2011)|
|Abstract:||This research is based on the Fresnel's equations and the ellipsometric technique that investigate the sample of SiO 2 thin-film on Si substrate. The investigation is made by a probing beam which is in the form of a rotating linearly polarized light generated by the polarizing Mach-Zehnder interferometer (pMZi). The detection of the changed polarization states of the incident light due to reflection on the sample surfaces led to a set of unique characteristics describing a thin-film substrate system in terms of ellipsometric parameters φ and Δ. SiO 2 thin-films were chosen to study because of their well known characteristics. The accuracy of measurements was confirmed by comparisons to calculated values derived from Fresnel's equations and a standard instrument. The results clearly reveal a feasibility of using the rotating linearly polarized light produced by pMZi for a non-destructive characterization of the thin-film system. © 2011 SPIE-OSA-IEEE.|
|Appears in Collections:||Scopus 2011-2015|
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