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dc.contributor.authorC. Pawongen_US
dc.contributor.authorR. Chitareeen_US
dc.contributor.authorC. Soankwanen_US
dc.contributor.otherMahidol Universityen_US
dc.identifier.citationOptics InfoBase Conference Papers. (2011)en_US
dc.description.abstractThis research is based on the Fresnel's equations and the ellipsometric technique that investigate the sample of SiO2 thinfilm on Si substrate. The investigation is made by a probing beam which is in the form of a rotating linearly polarized light generated by the polarizing Mach-Zehnder interferometer (pMZi). The detection of the changed polarization states of the incident light due to reflection on the sample surfaces led to a set of unique characteristics describing a thin-film substrate system in terms of ellipsometric parameters ψ and Δ. SiO 2 thin-films were chosen to study because of their well known characteristics. The accuracy of measurements was confirmed by comparisons to calculated values derived from Fresnel's equations and a standard instrument. The results clearly reveal a feasibility of using the rotating linearly polarized light produced by pMZi for a non-destructive characterization of the thin-film system. © 2011 SPIE-OSA-IEEE.en_US
dc.rightsMahidol Universityen_US
dc.subjectPhysics and Astronomyen_US
dc.titleInvestigation of the use of rotating linearly polarized light for characterizing SiO<inf>2</inf> thin-film on Si substrateen_US
dc.typeConference Paperen_US
Appears in Collections:Scopus 2011-2015

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