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|Title:||Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide|
National Institute of Advanced Industrial Science and Technology
Tokyo University of Science, Yamaguchi
|Keywords:||Engineering;Physics and Astronomy|
|Citation:||Proceedings of SPIE - The International Society for Optical Engineering. Vol.6793, (2008)|
|Abstract:||We fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.|
|Appears in Collections:||Scopus 2006-2010|
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