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Please use this identifier to cite or link to this item: http://repository.li.mahidol.ac.th/dspace/handle/123456789/19215
Title: Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide
Authors: Asawin Sinsarp
Takashi Manago
Fumiyoshi Takano
Hiro Akinaga
Mahidol University
National Institute of Advanced Industrial Science and Technology
Tokyo University of Science, Yamaguchi
Keywords: Engineering;Physics and Astronomy
Issue Date: 15-May-2008
Citation: Proceedings of SPIE - The International Society for Optical Engineering. Vol.6793, (2008)
Abstract: We fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=43249119409&origin=inward
http://repository.li.mahidol.ac.th/dspace/handle/123456789/19215
ISSN: 0277786X
Appears in Collections:Scopus 2006-2010

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