Simple jQuery Dropdowns
Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAsawin Sinsarpen_US
dc.contributor.authorTakashi Managoen_US
dc.contributor.authorFumiyoshi Takanoen_US
dc.contributor.authorHiro Akinagaen_US
dc.contributor.otherMahidol Universityen_US
dc.contributor.otherNational Institute of Advanced Industrial Science and Technologyen_US
dc.contributor.otherTokyo University of Science, Yamaguchien_US
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering. Vol.6793, (2008)en_US
dc.description.abstractWe fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.en_US
dc.rightsMahidol Universityen_US
dc.subjectPhysics and Astronomyen_US
dc.titleElectrical spin injection from an iron-rich iron-platinum thin film into gallium arsenideen_US
dc.typeConference Paperen_US
Appears in Collections:Scopus 2006-2010

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.