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Please use this identifier to cite or link to this item: http://repository.li.mahidol.ac.th/dspace/handle/123456789/25938
Title: Six-band k · p approach to the effects of doping on energy dispersion in p-type strained In<inf>0.15</inf>Ga<inf>0.85</inf>As-Al<inf>0.33</inf>Ga<inf>0.67</inf>As quantum-well structures
Authors: W. Shi
Dao Hua Zhang
Tanakorn Osotchan
IEEE
Nanyang Technological University
Shandong University
University of New South Wales (UNSW) Australia
Kasesart University
Chulalongkorn University
Macquarie University
Mahidol University
Keywords: Engineering;Physics and Astronomy
Issue Date: 1-Jul-2000
Citation: IEEE Journal of Quantum Electronics. Vol.36, No.7 (2000), 835-841
Abstract: We report an application of the six-band Luttinger-Kohn model to the subband energy dispersions in the valence band for the p-type In0.15Ga0.85As-Al0.33Ga0.67As quantum-well (QW) structures. It was found that, in addition to the conventional biaxial compressive strain related to the lattice constant and well width of the structures, the p-type doping also caused a shift of the subband energy levels in the valence band by varying the barrier height. It was also found that the strain of the QW structures was not a constant but was sensitive to the p-type doping intensity, which also induced the shift of the subband energy levels. The calculated results, based on intersubband transitions of the heavy holes and taking the doping-related changes in strain and barrier height into account, were in good agreement with the experimental data, measured using Fourier transform infrared technique.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0034228330&origin=inward
http://repository.li.mahidol.ac.th/dspace/handle/123456789/25938
ISSN: 00189197
Appears in Collections:Scopus 1991-2000

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