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|Title:||Six-band k · p approach to the effects of doping on energy dispersion in p-type strained In<inf>0.15</inf>Ga<inf>0.85</inf>As-Al<inf>0.33</inf>Ga<inf>0.67</inf>As quantum-well structures|
Dao Hua Zhang
Nanyang Technological University
University of New South Wales (UNSW) Australia
|Keywords:||Engineering;Physics and Astronomy|
|Citation:||IEEE Journal of Quantum Electronics. Vol.36, No.7 (2000), 835-841|
|Abstract:||We report an application of the six-band Luttinger-Kohn model to the subband energy dispersions in the valence band for the p-type In0.15Ga0.85As-Al0.33Ga0.67As quantum-well (QW) structures. It was found that, in addition to the conventional biaxial compressive strain related to the lattice constant and well width of the structures, the p-type doping also caused a shift of the subband energy levels in the valence band by varying the barrier height. It was also found that the strain of the QW structures was not a constant but was sensitive to the p-type doping intensity, which also induced the shift of the subband energy levels. The calculated results, based on intersubband transitions of the heavy holes and taking the doping-related changes in strain and barrier height into account, were in good agreement with the experimental data, measured using Fourier transform infrared technique.|
|Appears in Collections:||Scopus 1991-2000|
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