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|Title:||Organic light emitting devices using 9,10-bis (dodecylthio)anthracene as a new emitting material|
Thailand National Metal and Materials Technology Center
|Citation:||2009 6th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2009. Vol.1, (2009), 436-439|
|Abstract:||Organic light emitting devices have been fabricated using a new anthracene derivative; 9,10-bis(dodecylthio) anthracene (ADT). In this paper, ADT was used as dopant and emitter in PVK host matrix by spin-coating the layers of the doped polymer onto the cleaned indium tin oxide coated glass (ITO) / 3,4-polyethylene-dioxythiophene:polystyrene sulfonate (PEDOT:PSS) substrates. At room temperature the electroluminescence, centered at ∼475 nm, is delivered with the highest maximum current efficiency of 0.28 cd/A at 9 V and highest maximum luminance of 318 cd/m2 at 11.5 V from the PVK:ADT 30wt% device. CIE coordinate of devices was shifted from (0.16,0.13) to (0.16,0.26) for PVK:ADT 0.5wt% and 40wt% devices, respectively. Therefore, this material can be used as a new emitting material. ©2009 IEEE.|
|Appears in Collections:||Scopus 2006-2010|
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