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Please use this identifier to cite or link to this item: http://repository.li.mahidol.ac.th/dspace/handle/123456789/28456
Title: Point mutations in domain II of the voltage-gated sodium channel gene in deltamethrin-resistant aedes aegypti (diptera: culicidae)
Authors: Raweewan Srisawat
Narumon Komalamisra
Yuki Eshita
Mingqi Zheng
Katsushige Ono
Taichi Q. Itoh
Akira Matsumoto
Songsak Petmitr
Yupha Rongsriyam
Mahidol University
Oita University
Kyushu University
Juntendo University School of Medicine
Keywords: Agricultural and Biological Sciences
Issue Date: 8-Sep-2010
Citation: Applied Entomology and Zoology. Vol.45, No.2 (2010), 275-282
Abstract: The continuous usage of pyrethroids against insects has provoked the emergence of insecticide resistance that has become a major obstacle to disease vector control. The knockdown resistance (kdr) voltage-gated sodium channel gene is regarded as a key to understanding the mechanism of resistance to pyrethroids. The main purpose of this study is to identify point mutations in the sodium channel gene associated with deltamethrin resistance in Aedes aegypti. Two mutations in the IIS6 domain of the channel, S989P and V1016G, were identified as possible candidates responsible for the emergence of deltamethrin resistance in Ae. aegypti Khu Bua strain. As S989P and V1016G mutations are located within the IIS5-S6 loop and IIS6 near the ion filter and binding site, these mutations might enhance pyrethroid resistance. Allelic variation in the sodium channel gene is thought to be one of the principal molecular mechanisms regulating pyrethroid resistance in mosquitoes.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77956239750&origin=inward
http://repository.li.mahidol.ac.th/dspace/handle/123456789/28456
ISSN: 1347605X
00036862
Appears in Collections:Scopus 2006-2010

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