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dc.contributor.authorAsanee Somdeeen_US
dc.contributor.authorMalliga Suewattanaen_US
dc.contributor.authorAsawin Sinsarpen_US
dc.contributor.authorWithoon Chunwachirasirien_US
dc.contributor.otherMahidol Universityen_US
dc.date.accessioned2018-11-23T10:07:55Z-
dc.date.available2018-11-23T10:07:55Z-
dc.date.issued2015-01-01en_US
dc.identifier.citationSynthetic Metals. Vol.202, (2015), 98-102en_US
dc.identifier.issn03796779en_US
dc.identifier.other2-s2.0-84922576107en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84922576107&origin=inwarden_US
dc.identifier.urihttp://repository.li.mahidol.ac.th/dspace/handle/123456789/35945-
dc.description.abstract© 2015 Elsevier B.V. All rights reserved. We study the effect of skeleton conformations on the electronic structure of polysilanes and polysilanes with 50% Ti substitution (polytitasilanes) using first principle calculations. Various conformations including a trans-planar and a helical geometry of the skeleton backbone are examined. We found that in all cases, as the skeleton backbone is twisted away from being trans-planar, the bandgap increases. The overall band structures also exhibit some differences between the planar and helical configurations. The density of states shows that as Ti atoms are incorporated into the silane systems, the frontier state narrows indicating that the Ti substitution plays a major role at the lowest unoccupied conduction band and the highest occupied valance band. In addition, the backbone conformation has a strong influence on the bandgap and the frontier state for polytitasilanes which is not as apparent in the polysilanes.en_US
dc.rightsMahidol Universityen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84922576107&origin=inwarden_US
dc.subjectEngineeringen_US
dc.subjectMaterials Scienceen_US
dc.titleEffect of skeleton conformation on the electronic structure of 50% Ti substituted polysilanes from density functional calculationsen_US
dc.typeArticleen_US
dc.rights.holderSCOPUSen_US
dc.identifier.doi10.1016/j.synthmet.2015.01.013en_US
Appears in Collections:Scopus 2011-2015

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