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dc.contributor.authorPawasuth Saengdeeen_US
dc.contributor.authorWoraphan Chaisriratanakulen_US
dc.contributor.authorWin Bunjongpruen_US
dc.contributor.authorWitsaroot Sripumkhaien_US
dc.contributor.authorAwirut Srisuwanen_US
dc.contributor.authorCharndet Hruanunen_US
dc.contributor.authorAmporn Poyaien_US
dc.contributor.authorPonrut Phunpaeen_US
dc.contributor.authorSupansa Pataen_US
dc.contributor.authorWutthinan Jeamsaksirien_US
dc.contributor.authorWatchara Kasinreaken_US
dc.contributor.authorChamras Promptmasen_US
dc.contributor.otherMahidol Universityen_US
dc.contributor.otherThailand National Science and Technology Development Agencyen_US
dc.contributor.otherChiang Mai Universityen_US
dc.date.accessioned2018-12-11T02:07:48Z
dc.date.accessioned2019-03-14T08:04:00Z-
dc.date.available2018-12-11T02:07:48Z
dc.date.available2019-03-14T08:04:00Z-
dc.date.issued2016-10-21en_US
dc.identifier.citationAnalyst. Vol.141, No.20 (2016), 5767-5775en_US
dc.identifier.issn13645528en_US
dc.identifier.issn00032654en_US
dc.identifier.other2-s2.0-84990061917en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84990061917&origin=inwarden_US
dc.identifier.urihttp://repository.li.mahidol.ac.th/dspace/handle/123456789/42962-
dc.description.abstract© 2016 The Royal Society of Chemistry. A silicon nitride Ion Sensitive Field Effect Transistor (ISFET) based immunosensor was developed as a low-cost and label-free electrical detection for the detection of antigen 85 complex B (Ag85B). The sensing membrane of the ISFET was modified with 3-aminopropyltriethoxysilane (APTES) followed by glutaraldehyde (GA), yielding an aldehyde-terminated surface. This group is available for immobilization of a monoclonal antibody against a recombinant Ag85B protein (anti-Ag85B antibody). The optimal concentration for anti-Ag85B antibody immobilization onto the modified ISFET was 100 μg ml-1. This optimal condition provided the maximal binding capability and minimal non-specific background signal. The binding event between the recombinant Ag85B antigen and anti-Ag85B antibody on the ISFET surface is presented by monitoring the gate potential change at a constant drain current. The dose response for the recombinant Ag85B protein showed a linear response between 0.12 and 1 μg ml-1without significant interference from other recombinant proteins. The analytical imprecision (CV%) and accuracy of this Ag85B protein biosensor were 9.73-10.99% and 95.29%, respectively. In addition, an irrelevant antibody and other recombinant proteins were employed as a negative control to demonstrate the non-specific interaction of the antigen and antibody. The success of this immunosensor system for Ag85B protein detection facilitates the construction of a promising device which can shorten the turnaround time for the diagnosis of tuberculosis compared to a standard culture method. Furthermore, this device could also be applied for real-time growth monitoring of Mycobacterium tuberculosis in a mycobacterial culture system.en_US
dc.rightsMahidol Universityen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84990061917&origin=inwarden_US
dc.subjectBiochemistry, Genetics and Molecular Biologyen_US
dc.subjectChemistryen_US
dc.subjectEnvironmental Scienceen_US
dc.titleA silicon nitride ISFET based immunosensor for Ag85B detection of tuberculosisen_US
dc.typeArticleen_US
dc.rights.holderSCOPUSen_US
dc.identifier.doi10.1039/c6an00568cen_US
Appears in Collections:Scopus 2016-2017

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