Piangkhwan WanitchangSomboon SahasithiwatChakkrapan NerungsiTienthong ThongpanchangTeerakiat KerdcharoenMahidol UniversityThailand National Metal and Materials Technology Center2018-09-132018-09-132009-10-222009 6th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2009. Vol.1, (2009), 436-4392-s2.0-70350055034https://repository.li.mahidol.ac.th/handle/20.500.14594/27491Organic light emitting devices have been fabricated using a new anthracene derivative; 9,10-bis(dodecylthio) anthracene (ADT). In this paper, ADT was used as dopant and emitter in PVK host matrix by spin-coating the layers of the doped polymer onto the cleaned indium tin oxide coated glass (ITO) / 3,4-polyethylene-dioxythiophene:polystyrene sulfonate (PEDOT:PSS) substrates. At room temperature the electroluminescence, centered at ∼475 nm, is delivered with the highest maximum current efficiency of 0.28 cd/A at 9 V and highest maximum luminance of 318 cd/m2 at 11.5 V from the PVK:ADT 30wt% device. CIE coordinate of devices was shifted from (0.16,0.13) to (0.16,0.26) for PVK:ADT 0.5wt% and 40wt% devices, respectively. Therefore, this material can be used as a new emitting material. ©2009 IEEE.Mahidol UniversityComputer ScienceEngineeringConference PaperSCOPUS10.1109/ECTICON.2009.5137042