Asawin SinsarpTakashi ManagoFumiyoshi TakanoHiro AkinagaMahidol UniversityNational Institute of Advanced Industrial Science and TechnologyTokyo University of Science, Yamaguchi2018-07-122018-07-122008-05-15Proceedings of SPIE - The International Society for Optical Engineering. Vol.6793, (2008)0277786X2-s2.0-43249119409https://repository.li.mahidol.ac.th/handle/20.500.14594/19215We fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.Mahidol UniversityEngineeringPhysics and AstronomyConference PaperSCOPUS10.1117/12.799422