Don KlaitabtimSirapat PratontepJiti NukeawMahidol UniversityThailand National Science and Technology Development Agency2018-07-122018-07-122008-05-01Ceramics International. Vol.34, No.4 (2008), 1103-1107027288422-s2.0-42649122314https://repository.li.mahidol.ac.th/handle/20.500.14594/19044Zinc oxide thin films were prepared by the RF magnetron sputtering using a gas-timing technique whereby the flow of argon into the sputtering chamber was controlled by an on-off sequence. With this technique, polycrystalline ZnO thin films on glass substrates have been achieved without any thermal treatment of the substrate. In addition, the RF power and the gas-timing sequence can be fine-tuned to produce the hexagonal structure of ZnO thin films. X-ray diffraction (XRD) measurements confirm a (0 0 2) plane oriented wurtzite structure ZnO thin films. The optimized conditions for this hexagonal structure are an RF power of 30 W and an on-off gas-timing sequence of 50:2 s. The root mean square surface roughness of ZnO thin films measured by atomic force microscopy are in the range of 6.4-11.5 nm. The optical transmittance of ZnO thin films is over 85% in the visible range. © 2007 Elsevier Ltd and Techna Group S.r.l.Mahidol UniversityChemical EngineeringMaterials ScienceArticleSCOPUS10.1016/j.ceramint.2007.09.100