K. KanchiangT. CheiwchanchamnangijY. LaosiritawornS. PramchuA. P. JaroenjittichaiMaejo UniversityMahidol UniversityChiang Mai University2019-08-282019-08-282018-12-19Journal of Physics: Conference Series. Vol.1144, No.1 (2018)17426596174265882-s2.0-85059469042https://repository.li.mahidol.ac.th/handle/20.500.14594/47355© Published under licence by IOP Publishing Ltd. In this work, we studied the lattice dynamics and electronic structures of nitride semiconductors MgGe x Sn (1-x) N 2 , where x = 0, 0.25, 0.5, 0.75 and 1, using density functional theory (DFT) calculations. The core electronic states were represented via ultrasoft pseudo-potentials. From the results, lattice constants of MgGe x Sn (1-x) N 2 compounds decrease with increasing Ge concentrations according to the Vegard's law, where the lattice bowing coefficients p a , p b and p c are 0.043, -0.019 and 0.087 Å respectively. For the electronic band structure, the N-p dominated valence band was found to shift down and IV-s dominated conduction band moves up with increasing the Ge concentrations. In addition, the energy gap bowing coefficients p e is 0.916 eV.Mahidol UniversityPhysics and AstronomyConference PaperSCOPUS10.1088/1742-6596/1144/1/012149