Asawin SinsarpTakashi ManagoFumiyoshi TakanoHiro AkinagaMahidol UniversityNational Institute of Advanced Industrial Science and TechnologyTokyo University of Science, Yamaguchi2018-07-122018-07-122008-03-01Journal of Nonlinear Optical Physics and Materials. Vol.17, No.1 (2008), 105-109021886352-s2.0-44249104021https://repository.li.mahidol.ac.th/handle/20.500.14594/19406We fabricated an FePt/MgO tunneling junction (Fe 55 atomic %) on a GaAs-based light-emitting-diode structure. The out-of-plane magnetization of the FePt thin film was confirmed by a magneto-optical measurement. The electrical spin injection from FePt into GaAs at room temperature was studied using the technique of spin-polarized electroluminescence. The spin polarization of the injected electrons under the magnetic field of 1 T was at least 6.0%. The remnant polarization at 0 T, which indicates the spin injection without a magnetic field, was at least 3.3%. © 2008 World Scientific Publishing Company.Mahidol UniversityMaterials SciencePhysics and AstronomyArticleSCOPUS10.1142/S0218863508003993