Asawin SinsarpTakashi ManagoFumiyoshi TakanoHiro AkinagaNational Institute of Advanced Industrial Science and TechnologyTokyo University of Science, YamaguchiMahidol University2018-08-242018-08-242007-08-01Journal of Superconductivity and Novel Magnetism. Vol.20, No.6 (2007), 405-40815571947155719392-s2.0-34748857994https://repository.li.mahidol.ac.th/handle/20.500.14594/24601We report zero-magnetic-field spin injection from FePt into GaAs at room temperature using FePt/MgO/GaAs-based light-emitting diode heterostructures. Experiments are performed on two samples with different compositions; Fe61Pt39and Fe57Pt43. The polarizations of injected electrons at 0 T for these two samples are at least 1.5% and 3.3%, respectively. The higher zero-magnetic-field injected spin polarization is considered to be due to the better remanent perpendicular magnetization of the FePt layer in the sample with Fe57Pt43. © 2007 Springer Science+Business Media, LLC.Mahidol UniversityMaterials SciencePhysics and AstronomyElectrical spin injection in perpendicular magnetized FePt/MgO/GaAs heterostructures at room temperatureArticleSCOPUS10.1007/s10948-007-0244-5