W. LuangtipS. RotbuathongP. ChindaudomM. HorphatumV. PatthanasetthakulP. EiamchaiT. SrikirinMahidol UniversityKing Mongkuts University of Technology ThonburiThailand National Electronics and Computer Technology Center2018-07-122018-07-122008-12-01Advanced Materials Research. Vol.55-57, (2008), 449-452102266802-s2.0-62949237492https://repository.li.mahidol.ac.th/handle/20.500.14594/19200This work is to study the diffusion of Al into amorphous silicon (a-Si) thin film at the elevated temperature by in-situ Spectroscopic Ellipsometry (SE). The sputtered a-Si film 60 nm thick on an optically opaque Al (100 nm) layer on silicon wafer was heated in a temperature controlled heating sample stage from room temperature to 300°C and slowly cooled down to room temperature while the dynamic SE data were measured. It was found that the δ and ψ spectra began to change quickly at 200°C until the temperature reached 250°C, then continue to changed very slowly until 300°C. No significant change could be observed while the sample was cooling down to room temperature. The full spectral SE measurements were also taken at every 50°C steps and used to model the diffusion of Al into the top a-Si film. The interface layer due to diffusion was modeled by Bruggeman Effective Medium Approximation (EMA) theory as the mixture of Al and Si. © 2008 Trans Tech Publications, Switzerland.Mahidol UniversityEngineeringConference PaperSCOPUS