J. LeinerB. J. KirbyM. R. FitzsimmonsK. TivakornsasithornX. LiuJ. K. FurdynaM. DobrowolskaOak Ridge National LaboratoryNational Institute of Standards and TechnologyLos Alamos National LaboratoryMahidol UniversityUniversity of Notre Dame2018-11-092018-11-092014-01-01Journal of Magnetism and Magnetic Materials. Vol.350, (2014), 135-140030488532-s2.0-84885409501https://repository.li.mahidol.ac.th/handle/20.500.14594/34123Controlled vertical grading of magnetization of the ferromagnetic semiconductor GaMnAs represents a significant step toward optimizing its magnetic properties for device applications. Quantitative control of such grading is difficult due to various competing effects, such as Mn diffusion, self-annealing, and diffusion of charge carriers. Furthermore, there are also several surface effects that can influence the magnetization profile, which should be considered in designing and fabricating graded GaMnAs specimens. However, we show that vertical magnetization gradients in GaMnAs layers can be readily achieved by appropriate growth strategies. In this paper we describe the preparation, magnetization measurements, and polarized neutron reflectometry studies of vertically graded GaMnAs layers, which provide direct evidence that vertical grading of Mn concentration has been successfully achieved in our GaMnAs samples. Our measurements also indicate that these graded samples exhibit magnetic "hardening" near the surface.Mahidol UniversityMaterials SciencePhysics and AstronomyArticleSCOPUS10.1016/j.jmmm.2013.09.004