Thongpan W.Kumpika T.Kantarak E.sroila W.Louloudakis D.Ručmanc S.Thongsuwan W.Singjai P.Mahidol University2023-06-182023-06-182022-03-15Materials Letters Vol.311 (2022)0167577Xhttps://repository.li.mahidol.ac.th/handle/123456789/86924We present a practical and simple method for the fabrication of nanostructured, highly transparent and conductive, porous tin-doped indium oxide (ITO) thin films via a novel sparking method. The pore structure consists of the densely packed secondary nanoparticles, which is the highlight of our sparking method, was observed through FE-SEM images. The crystallization and oxidation of the films occurred during the post-annealing process, where the XRD patterns confirmed the polycrystalline in nature and crystallizes in a cubic structure of In2O3. Our porous ITO films provide good conductivity with resistivity of 4.6 × 10−3 Ω.cm and large transmittance of 84% for films prepared at 160 s deposition time with an indium/tin atomic ratio of 90:10 and post-annealed at 500 °C for 3 h, which are potential materials for optoelectronic applications.Physics and AstronomyArticleSCOPUS10.1016/j.matlet.2021.1315912-s2.0-8512196629718734979