Valerio AdinolfiMingjian YuanRiccardo CominEmmanuel S. ThibauDong ShiMakhsud I. SaidaminovPongsakorn KanjanaboosDamir KopilovicSjoerd HooglandZheng Hong LuOsman M. BakrEdward H. SargentUniversity of TorontoKing Abdullah University of Science and TechnologyMahidol University2018-12-112019-03-142018-12-112019-03-142016-01-01Advanced Materials. Vol.28, No.17 (2016), 3406-341015214095093596482-s2.0-84959261163https://repository.li.mahidol.ac.th/handle/123456789/40698Macroscopic crystals were used to obtain an in-depth characterization of the electronic and in-gap properties of methylammonium lead iodide (MAPbI3. The process was started with a compositional and optical investigation that confirmed the quality of the material. The band diagram of the semiconductor with particular attention to its surface properties was determined experimentally, which was fundamental for the applications. The mobility and diffusion length of both electrons and holes were directly measured, along with the concentration and type of the charge carriers.Mahidol UniversityEngineeringMaterials ScienceArticleSCOPUS10.1002/adma.201505162