Vittaya AmornkitbamrungSomphong ChatraphornMahidol University2018-06-142018-06-141987-01-01Journal of Crystal Growth. Vol.84, No.2 (1987), 326-328002202482-s2.0-45949116454https://repository.li.mahidol.ac.th/handle/123456789/15329Islets of α-Sn have been epitaxially grown by the dipping liquid phase epitaxy (LPE) technique on (111)B InSb substrates in Sn/Hg melt at 12.5°C. The α-Sn phase is stable to approximately 60°C, which is comparable to the results obtained by molecular beam epitaxy (MBE) and evaporation in UHV techniques reported earlier by other workers. © 1987.Mahidol UniversityChemistryMaterials SciencePhysics and AstronomyLetterSCOPUS10.1016/0022-0248(87)90149-7