S. DangtipY. HoshiY. KasaharaY. OnaiT. OsotchanY. SawadaT. UchidaMahidol UniversityTokyo Polytechnic University2018-07-122018-07-122008-03-01Journal of Physics: Conference Series. Vol.100, No.PART 4 (2008)17426596174265882-s2.0-77954336216https://repository.li.mahidol.ac.th/handle/20.500.14594/19895Deposition of ITO as top transparent electrode was studied using two deposition systems with and without direct contact to working plasma; namely with conventional RF-magnetron planar (RSS) and pulsed-DC facing target sputtering systems (FTS). Test devices were made on glass substrates and consisted of (from bottom up) ITO/4 Organic Layers/ITO. Depositions were performed at low deposition powers; 30 and 60 watts, to reduce damages by energetic sputtered particles to underlying organic layers. Test devices from both sputtering systems were found to function well. Leakage current density at -5 V reverse bias were relatively constant from 0.3 and 0.4 mA/cm2at 30 W and 60 W in FTS, while the values were found to increase from 0.001 to 0.2mA/cm2at 30 W and 60 W in RSS. © 2008 IOP Publishing Ltd.Mahidol UniversityPhysics and AstronomyConference PaperSCOPUS10.1088/1742-6596/100/4/042011