T. BovornratanaraksK. KotmoolK. YoodeeM. I. McMahonD. RuffoloChulalongkorn UniversitySouth Carolina Commission on Higher EducationMahidol Wittayanusorn SchoolUniversity of EdinburghMahidol University2018-09-242018-09-242010-05-11Journal of Physics: Conference Series. Vol.215, (2010)17426596174265882-s2.0-77951929557https://repository.li.mahidol.ac.th/handle/123456789/29951The structural phase transformations in the chalcopyrite semiconductor AgInTe2have been studied up to 10 GPa on both pressure increase and decrease. The experiments were conducted using angle-dispersive X-ray diffraction with synchrotron radiation and an image plate. The diffraction patterns of AgInTe2at ambient pressure reveal two coexisting phases: the first has the chalcopyrite structure while the second has a zincblende-like structure. On pressure increase both phases transformed at 3-4 GPa to a cation-disordered orthorhombic structure with spacegroup Cmcm. On pressure decrease, the chalcopyrite phase started to reappear at 0.55 GPa, and the Cmcm phase disappeared completely at ambient pressure. © 2010 IOP Publishing Ltd.Mahidol UniversityPhysics and AstronomyConference PaperSCOPUS10.1088/1742-6596/215/1/012008