Browsing by Author "Hakjoon Lee"

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    Magnetization reversal and interlayer exchange coupling in ferromagnetic metal/semiconductor Fe/GaMnAs hybrid bilayers
    (2018-12-01) Kritsanu Tivakornsasithorn; Taehee Yoo; Hakjoon Lee; Sangyeop Lee; Seonghoon Choi; Seul Ki Bac; Kyung Jae Lee; Sanghoon Lee; Xinyu Liu; M. Dobrowolska; Jacek K. Furdyna; University of Notre Dame; Mahidol University; Korea University
    © 2018 The Author(s). We report a detailed study of magnetization reversal in Fe/GaMnAs bilayers carried out by magnetotransport measurements. Specifically, we have used planar Hall resistance (PHR), which is highly sensitive to the direction of magnetization, and is therefore ideally suited for tracking magnetization as it reorients between successive easy axes in the two magnetic layers during reversal. These reorientations take place separately in the two magnetic layers, resulting in a series of different magnetization alignments (parallel or orthogonal) during reversal, providing a series of stable PHR states. Our results indicate that the magnetic anisotropy of the structure is dominated by cubic symmetry of both layers, showing two in-plane easy axes, but with significantly different energy barriers between the easy orientations. Importantly, a careful analysis of the PHR results has also revealed the presence of strong ferromagnetic interlayer exchange coupling (IEC) between the two magnetic layers, indicating that although magnetization reorients separately in each layer, this process is not independent, since the behavior of one layer is influenced by its adjacent magnetic neighbor. The ability to design and realize multiple PHR states, as observed in this investigation, shows promise for engineering Fe/GaMnAs bilayer structures for multinary magnetic memory devices and related multinary logic elements.
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    Spacer-thickness dependence of interlayer exchange coupling in GaMnAs/InGaAs/GaMnAs trilayers grown on ZnCdSe buffers
    (2017-03-01) Kritsanu Tivakornsasithorn; Taehee Yoo; Hakjoon Lee; Seonghoon Choi; Sanghoon Lee; Xinyu Liu; M. Dobrowolska; Jacek K. Furdyna; Korea University; Mahidol University; University of Notre Dame
    © 2017 Elsevier Ltd Interlayer exchange coupling (IEC) between GaMnAs layers in GaMnAs/InGaAs/GaMnAs tri-layers was studied by magnetization measurements. Minor hysteresis loops are observed to shift in a direction indicating the presence of ferromagnetic (FM) IEC in the structures. The strength of the FM IEC clearly exhibits an exponential decrease with respect to nonmagnetic InGaAs spacer thickness. The fitting of the spacer thickness dependence of the FM IEC to an exponential decay function provides a decay length of 3.3±0.3 nm, which is relatively large compared to metallic multilayers, indicating a long ranged IEC in systems based on GaMnAs.