Publication: Spin switching effects in a ferromagnetic graphene junction having a second gate
Issued Date
2010
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eng
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Mahidol University
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ScienceDirect
Bibliographic Citation
Physica E: Low-Dimensional Systems and Nanostructures. Vol. 42, No. 5 (2010), 1287-1292
Suggested Citation
Watchara Liewrian, Rassmidara Hoonsawat, I-Ming Tang Spin switching effects in a ferromagnetic graphene junction having a second gate. Physica E: Low-Dimensional Systems and Nanostructures. Vol. 42, No. 5 (2010), 1287-1292. Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/10962
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Title
Spin switching effects in a ferromagnetic graphene junction having a second gate
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Abstract
The effects of the bias voltage placed on a second gate which is positioned to the left of the ferromagnetic graphene (FG) layer on the switching of the charge and spin transports in a ferromagnetic graphene junction are studied. We show that the change in the bias voltage from positive to negative (while maintaining
the positive voltage on the first gate above the FG layer) can induce a switching from high to low conductance states in the junction. The voltage on the first gate is used to shift the Fermi level in the FG layer. Enhancement of the on/off conductance ratio on the switching is shown to be inversely proportional to the
thickness of the second gate barrier. We show that by biasing the nanostructures with the voltage U2, the spin polarization can be increased and that as a consequence, the thickness of the FG barrier layer needed for spin-polarized transport can be reduced.