Publication:
Effects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin film

dc.contributor.authorS. Dangtipen_US
dc.contributor.authorN. Sripongphanen_US
dc.contributor.authorN. Boonyopakornen_US
dc.contributor.authorC. Thanachayanonten_US
dc.contributor.otherMahidol Universityen_US
dc.contributor.otherNational Metal and Materials Technology Center (MTEC)en_US
dc.date.accessioned2018-09-13T06:29:47Z
dc.date.available2018-09-13T06:29:47Z
dc.date.issued2009-04-01en_US
dc.description.abstractThin TiO2films have been deposited on glass substrates by a radio-frequency (rf) magnetron sputtering technique. The films were coated under argon atmosphere at three different rf-powers: 80, 100 and 120 W, and three working pressures: 1.0 × 10-2, 2.5 × 10-3and 1.0 × 10-3mbar. Film structures were analyzed with XRD. At 100 and 120 W, films coated under low working pressure have developed the rutile phase with the preferred (1 1 0) orientation. However, at 80 W, the films have been observed only in an amorphous phase for all working pressures. This effect could be understood as sputtered TiO2molecules were more energetic at high rf-powers and encountered fewer collisions at low pressure before deposited onto the substrates. The films have also been annealed at 773 or 873 K. The post-deposition annealing has significantly improved crystallization of the TiO2films. In this contribution, results on optical and wetting properties of these films are also reported. © 2008 Elsevier Ltd and Techna Group S.r.l.en_US
dc.identifier.citationCeramics International. Vol.35, No.3 (2009), 1281-1284en_US
dc.identifier.doi10.1016/j.ceramint.2008.04.018en_US
dc.identifier.issn02728842en_US
dc.identifier.other2-s2.0-59549084701en_US
dc.identifier.urihttps://repository.li.mahidol.ac.th/handle/20.500.14594/27383
dc.rightsMahidol Universityen_US
dc.rights.holderSCOPUSen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=59549084701&origin=inwarden_US
dc.subjectChemical Engineeringen_US
dc.subjectMaterials Scienceen_US
dc.titleEffects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin filmen_US
dc.typeArticleen_US
dspace.entity.typePublication
mu.datasource.scopushttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=59549084701&origin=inwarden_US

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