Publication: Effects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin film
dc.contributor.author | S. Dangtip | en_US |
dc.contributor.author | N. Sripongphan | en_US |
dc.contributor.author | N. Boonyopakorn | en_US |
dc.contributor.author | C. Thanachayanont | en_US |
dc.contributor.other | Mahidol University | en_US |
dc.contributor.other | National Metal and Materials Technology Center (MTEC) | en_US |
dc.date.accessioned | 2018-09-13T06:29:47Z | |
dc.date.available | 2018-09-13T06:29:47Z | |
dc.date.issued | 2009-04-01 | en_US |
dc.description.abstract | Thin TiO2films have been deposited on glass substrates by a radio-frequency (rf) magnetron sputtering technique. The films were coated under argon atmosphere at three different rf-powers: 80, 100 and 120 W, and three working pressures: 1.0 × 10-2, 2.5 × 10-3and 1.0 × 10-3mbar. Film structures were analyzed with XRD. At 100 and 120 W, films coated under low working pressure have developed the rutile phase with the preferred (1 1 0) orientation. However, at 80 W, the films have been observed only in an amorphous phase for all working pressures. This effect could be understood as sputtered TiO2molecules were more energetic at high rf-powers and encountered fewer collisions at low pressure before deposited onto the substrates. The films have also been annealed at 773 or 873 K. The post-deposition annealing has significantly improved crystallization of the TiO2films. In this contribution, results on optical and wetting properties of these films are also reported. © 2008 Elsevier Ltd and Techna Group S.r.l. | en_US |
dc.identifier.citation | Ceramics International. Vol.35, No.3 (2009), 1281-1284 | en_US |
dc.identifier.doi | 10.1016/j.ceramint.2008.04.018 | en_US |
dc.identifier.issn | 02728842 | en_US |
dc.identifier.other | 2-s2.0-59549084701 | en_US |
dc.identifier.uri | https://repository.li.mahidol.ac.th/handle/20.500.14594/27383 | |
dc.rights | Mahidol University | en_US |
dc.rights.holder | SCOPUS | en_US |
dc.source.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=59549084701&origin=inward | en_US |
dc.subject | Chemical Engineering | en_US |
dc.subject | Materials Science | en_US |
dc.title | Effects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin film | en_US |
dc.type | Article | en_US |
dspace.entity.type | Publication | |
mu.datasource.scopus | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=59549084701&origin=inward | en_US |