Publication: Investigation of the use of rotating linearly polarized light for characterizing SiO <inf>2</inf> thin-film on Si substrate
1
Issued Date
2011-12-01
Resource Type
Other identifier(s)
2-s2.0-84864105786
Rights
Mahidol University
Rights Holder(s)
SCOPUS
Bibliographic Citation
2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011. (2011)
Suggested Citation
C. Pawong, R. Chitaree, C. Soankwan Investigation of the use of rotating linearly polarized light for characterizing SiO <inf>2</inf> thin-film on Si substrate. 2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011. (2011). Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/11751
Research Projects
Organizational Units
Authors
Journal Issue
Thesis
Title
Investigation of the use of rotating linearly polarized light for characterizing SiO <inf>2</inf> thin-film on Si substrate
Author(s)
Other Contributor(s)
Abstract
This research is based on the Fresnel's equations and the ellipsometric technique that investigate the sample of SiO 2 thin-film on Si substrate. The investigation is made by a probing beam which is in the form of a rotating linearly polarized light generated by the polarizing Mach-Zehnder interferometer (pMZi). The detection of the changed polarization states of the incident light due to reflection on the sample surfaces led to a set of unique characteristics describing a thin-film substrate system in terms of ellipsometric parameters φ and Δ. SiO 2 thin-films were chosen to study because of their well known characteristics. The accuracy of measurements was confirmed by comparisons to calculated values derived from Fresnel's equations and a standard instrument. The results clearly reveal a feasibility of using the rotating linearly polarized light produced by pMZi for a non-destructive characterization of the thin-film system. © 2011 SPIE-OSA-IEEE.