Publication: Transition in (001) AlGaAs/AlAs/GaAs double-barrier quantum structure for infrared photodetection
Issued Date
1996-11-01
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ISSN
00218979
DOI
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2-s2.0-0003719304
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Mahidol University
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SCOPUS
Bibliographic Citation
Journal of Applied Physics. Vol.80, No.9 (1996), 5342-5347
Suggested Citation
T. Osotchan, V. W.L. Chin, T. L. Tansley Transition in (001) AlGaAs/AlAs/GaAs double-barrier quantum structure for infrared photodetection. Journal of Applied Physics. Vol.80, No.9 (1996), 5342-5347. doi:10.1063/1.363473 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/17838
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Title
Transition in (001) AlGaAs/AlAs/GaAs double-barrier quantum structure for infrared photodetection
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Abstract
Optical transitions for the (001) Al0.3Ga0.7As/AlAs/GaAs double-barrier superlattices are evaluated by a semiempirical, tight-binding calculation. The oscillator strength between the hole and electron states confined in either Γ- or X-like well are investigated as a function of AlAs slab thickness. Intersub-band transition within the conduction band, including Γ- and X-like superlattice (SL) states, is described for a quantum well infrared photodetector (QWIP). We found that for a specific design structure, it is possible to achieve the dual wavelength QWIP with comparable oscillator strength for the 3-5 μm and 8-14 μm atmospheric windows. In addition, by varying the AlAs barrier thickness, the characteristics of bound-to-continuous and bound-to-quasibound QWIPs are related to the stationary discrete SL states. As the AlAs thickness increases, the bound-to-continuous state transition becomes weak while the bound-to-quasibound state transition becomes more significant. Optical coupling between X-like state is relatively weak and the transition between the different characteristic states is even weaker. © 1996 American Institute of Physics.