Publication: Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced relativistic mass
Issued Date
2011-08-01
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ISSN
13869477
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2-s2.0-79961167975
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Mahidol University
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SCOPUS
Bibliographic Citation
Physica E: Low-Dimensional Systems and Nanostructures. Vol.43, No.10 (2011), 1867-1873
Suggested Citation
Assanai Suwanvarangkoon, I. Ming Tang, Rassmidara Hoonsawat, Bumned Soodchomshom Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced relativistic mass. Physica E: Low-Dimensional Systems and Nanostructures. Vol.43, No.10 (2011), 1867-1873. doi:10.1016/j.physe.2011.06.023 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/12111
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Title
Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced relativistic mass
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Abstract
We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, relativistic mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced relativistic mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced relativistic mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction. © 2011 Elsevier B.V.