Publication:
Noncontact thickness and composition assessment of a strained AIGaAs/AIAs/InGaAs double barrier multiple quantum well structure

Issued Date

1996-08-15

Resource Type

Article

ISSN

00218979

DOI

10.1063/1.363036

Other identifier(s)

2-s2.0-0348249633

Rights

Mahidol University

Rights Holder(s)

SCOPUS

Bibliographic Citation

Journal of Applied Physics. Vol.80, No.4 (1996), 2521-2523

Suggested Citation

V. W.L. Chin, R. J. Egan, T. Osotchan, M. R. Vaughan, S. C. Anderson Noncontact thickness and composition assessment of a strained AIGaAs/AIAs/InGaAs double barrier multiple quantum well structure. Journal of Applied Physics. Vol.80, No.4 (1996), 2521-2523. doi:10.1063/1.363036 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/17840

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Title

Noncontact thickness and composition assessment of a strained AIGaAs/AIAs/InGaAs double barrier multiple quantum well structure

Author(s)

V. W.L. Chin
 R. J. Egan
 T. Osotchan
 M. R. Vaughan
 S. C. Anderson

Other Contributor(s)

Macquarie University
 Australian National University
 The University of Sydney
 Pacific Solar Pty Ltd.
 Mahidol University

Abstract

By using a contactless double crystal x-ray diffraction technique with either photoluminescence or infrared intersubband absorption and theoretical calculations, it is possible to determine the dimensions and composition of a three layered multiple quantum well (MQW) structure accurately. A strained AlGaAs/AlAs/InGaAs double barrier (DB) three layered MQW structure was used to demonstrate this. Moreover, it is shown that this structure is well suited for infrared photodetection in the 3 μm wavelength region, based on intersubband absorption. The compositions and thicknesses evaluated are in good agreement, and transmission electron microscopy is utilized to confirm the thicknesses. © 1996 American Institue of Physics.

Keyword(s)

Physics and Astronomy

Availability

URI

https://repository.li.mahidol.ac.th/handle/20.500.14594/17840

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Scopus 1991-2000