Publication: Effects of band gap opening on an npn bilayer graphene junction
Issued Date
2011-03-03
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ISSN
13869477
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2-s2.0-79952484652
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Mahidol University
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SCOPUS
Bibliographic Citation
Physica E: Low-Dimensional Systems and Nanostructures. Vol.43, No.5 (2011), 1061-1064
Suggested Citation
Chaipattana Saisa-Ard, I. Ming Tang, Rassmidara Hoonsawat Effects of band gap opening on an npn bilayer graphene junction. Physica E: Low-Dimensional Systems and Nanostructures. Vol.43, No.5 (2011), 1061-1064. doi:10.1016/j.physe.2010.12.015 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/12117
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Title
Effects of band gap opening on an npn bilayer graphene junction
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Abstract
The energy dispersion relations for the electrons and holes in bilayer graphene are parabolic in shape, i.e., they are non relativistic, and they touch at the K and K′ points. A (band) gap between the two relationships can be easily induced, which converts the bilayer graphene from being a zero-gap semiconductor into a gapped semiconductor. The changes in several of the transport properties of a bilayer graphene-based npn junction are simulated. It is seen that the presence of a band gap in the p-region leads the dependence of the transmission probabilities on the parameters of the junction to be different from those in the absence of the gap. It becomes possible to control the current flow in the npn junction by adjusting the thickness and height of the p-region. Increasing the band gap makes the control more sensitive to these adjustments. © 2010 Elsevier B.V. All rights reserved.