Publication:
Modification of solvolytic sol-gel synthesis for low temperature TiO2 DSSC photoelectrode

dc.contributor.authorSaran Kalasinaen_US
dc.contributor.authorTaweechai Amornsakchaien_US
dc.contributor.authorUdom Asawapiromen_US
dc.contributor.otherMahidol Universityen_US
dc.contributor.otherThailand National Science and Technology Development Agencyen_US
dc.date.accessioned2018-11-09T02:17:31Z
dc.date.available2018-11-09T02:17:31Z
dc.date.issued2014-01-01en_US
dc.description.abstractSolvolytic sol-gel synthesis was applied for the low temperature production of photoelectrode for dye-sensitized solar cell (DSSC). In this study, commercial TiO2 standard (Degussa P25) was used as the main component in the preparation of photoelectrode film. Addition of TiO2 gel prepared from a solvolytic sol-gel method reduced cracking in the dry film while still maintains porosity. Further modification by simply adding hydrofluoric acid (HF) and ammonia (NH3) increase porosity and improve interconnection between fluorine doped tin oxide (FTO) layer on the substrate and the coated TiO2 layer even under low temperature baking condition (<150°C). The modified TiO2 electrode showed significantly better electrical and electrochemical properties. Furthermore, the DSSC cell with modified TiO2 film also showed higher cell efficiency when compared with the controlled cell that used only Degussa P25. © (2014) Trans Tech Publications, Switzerland.en_US
dc.identifier.citationAdvanced Materials Research. Vol.979, (2014), 39-42en_US
dc.identifier.doi10.4028/www.scientific.net/AMR.979.39en_US
dc.identifier.issn16628985en_US
dc.identifier.issn10226680en_US
dc.identifier.other2-s2.0-84904210931en_US
dc.identifier.urihttps://repository.li.mahidol.ac.th/handle/123456789/33897
dc.rightsMahidol Universityen_US
dc.rights.holderSCOPUSen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84904210931&origin=inwarden_US
dc.subjectEngineeringen_US
dc.titleModification of solvolytic sol-gel synthesis for low temperature TiO2 DSSC photoelectrodeen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
mu.datasource.scopushttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84904210931&origin=inwarden_US

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