Publication: Switching effect in a gapped graphene d-wave superconductor structure
Issued Date
2010-03-01
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ISSN
09214526
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2-s2.0-74849121078
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Mahidol University
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SCOPUS
Bibliographic Citation
Physica B: Condensed Matter. Vol.405, No.5 (2010), 1383-1387
Suggested Citation
Bumned Soodchomshom Switching effect in a gapped graphene d-wave superconductor structure. Physica B: Condensed Matter. Vol.405, No.5 (2010), 1383-1387. doi:10.1016/j.physb.2009.12.004 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/29097
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Title
Switching effect in a gapped graphene d-wave superconductor structure
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Abstract
By depositing a d-wave superconductor (using proximity method) on the top of graphene grown on a substrate-induced bandgap (such as a SiC substrate), a d-wave superconductor caused by the massive Dirac electrons can be fabricated. Using the BTK theory, the tunneling conductance in a gapped graphene N/d-wave superconductor junction, where N is a normal gapped graphene, is studied. This work focuses on the influence of d-wave pairing on the conductance of the junction. In this result, for conductance G/GN plotted versus either the biased voltage V or the d-wave superconducting orientation angular α, a sharp conductance peak like an impulse function can be observed due to increasing the Dirac energy gap. The maximum conductance peak Gmax is also enhanced by increasing the electrostatic potential U in superconductor-electrode, giving rise to Gmax/GN=2 for increasing U → ∞. This sharp conductance peak occurs related to the condition of eV = Δ cos (2 α). The unit step conductance in this junction, G / GN = 2 Θ (U), is found for α = π / 4 and eV / Δ = 0 when EF - m vF2 → 0. This is unlike a unit step conductance in a gapped graphene N/s-wave superconductor junction which was recently observed for eV / Δ = 1. © 2009 Elsevier B.V. All rights reserved.