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Analytic expression for electronic density of states in random media with weak scattering potential

dc.contributor.authorUdomsilp Pinsooken_US
dc.contributor.authorVirulh Sa-yakaniten_US
dc.contributor.otherMahidol Universityen_US
dc.date.accessioned2018-07-12T02:33:01Z
dc.date.available2018-07-12T02:33:01Z
dc.date.issued2008-10-01en_US
dc.description.abstractWe evaluate the electronic density of states (DOS) in random media by using the expression from the variational path integral theory. The scattering potential is modeled by a Gaussian function. By imposing the limit of weak scattering, the full spectrum DOS can be approximated by an analytical method. The solution has several features; in the extended states, it is essentially proportional to sqrt(E). In the localized states, it resembles an exponential tail. However, this tail has less population than that of the compatible Kane DOS. The total energy of the system is lowered by Eα, depending linearly on the density of scatterers. Our results give good description to the photoluminescence spectra of Si:P and the tunneling measurement of GaAs. © 2008 Elsevier Ltd. All rights reserved.en_US
dc.identifier.citationSolid State Communications. Vol.148, No.1-2 (2008), 42-45en_US
dc.identifier.doi10.1016/j.ssc.2008.07.017en_US
dc.identifier.issn00381098en_US
dc.identifier.other2-s2.0-49649126308en_US
dc.identifier.urihttps://repository.li.mahidol.ac.th/handle/123456789/19394
dc.rightsMahidol Universityen_US
dc.rights.holderSCOPUSen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=49649126308&origin=inwarden_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleAnalytic expression for electronic density of states in random media with weak scattering potentialen_US
dc.typeArticleen_US
dspace.entity.typePublication
mu.datasource.scopushttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=49649126308&origin=inwarden_US

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