Publication: The In-Gap Electronic State Spectrum of Methylammonium Lead Iodide Single-Crystal Perovskites
3
Issued Date
2016-01-01
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ISSN
15214095
09359648
09359648
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2-s2.0-84959261163
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Mahidol University
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SCOPUS
Bibliographic Citation
Advanced Materials. Vol.28, No.17 (2016), 3406-3410
Suggested Citation
Valerio Adinolfi, Mingjian Yuan, Riccardo Comin, Emmanuel S. Thibau, Dong Shi, Makhsud I. Saidaminov, Pongsakorn Kanjanaboos, Damir Kopilovic, Sjoerd Hoogland, Zheng Hong Lu, Osman M. Bakr, Edward H. Sargent The In-Gap Electronic State Spectrum of Methylammonium Lead Iodide Single-Crystal Perovskites. Advanced Materials. Vol.28, No.17 (2016), 3406-3410. doi:10.1002/adma.201505162 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/40698
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Title
The In-Gap Electronic State Spectrum of Methylammonium Lead Iodide Single-Crystal Perovskites
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Abstract
Macroscopic crystals were used to obtain an in-depth characterization of the electronic and in-gap properties of methylammonium lead iodide (MAPbI3. The process was started with a compositional and optical investigation that confirmed the quality of the material. The band diagram of the semiconductor with particular attention to its surface properties was determined experimentally, which was fundamental for the applications. The mobility and diffusion length of both electrons and holes were directly measured, along with the concentration and type of the charge carriers.