Publication:
Effect of interface roughness on the density of states of finite barrier height quantum wells

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dc.contributor.authorA. Thongnumen_US
dc.contributor.authorU. Pinsooken_US
dc.contributor.authorS. Khan-ngernen_US
dc.contributor.authorV. Sa-yakaniten_US
dc.contributor.otherKhon Kaen Universityen_US
dc.contributor.otherMahidol Universityen_US
dc.date.accessioned2018-07-12T02:23:47Z
dc.date.available2018-07-12T02:23:47Z
dc.date.issued2008-01-01en_US
dc.description.abstractWe calculate the density of states of a 2D electron gas in finite barrier height quantum wells with the explicit inclusion of the interface roughness effect. By using Feynman path-integral method, the analytic expression is derived. The results show that the 2D density of states is dependent on the RMS of the fluctuation potential. The interface roughness causes localized states below the subband edge. We also apply the theory to model the finite barrier height quantum wells in AlxGa1-xAs/GaAs.en_US
dc.identifier.citationSolid State Communications. Vol.145, No.4 (2008), 207-211en_US
dc.identifier.doi10.1016/j.ssc.2007.10.024en_US
dc.identifier.issn00381098en_US
dc.identifier.other2-s2.0-36849043149en_US
dc.identifier.urihttps://repository.li.mahidol.ac.th/handle/20.500.14594/19101
dc.rightsMahidol Universityen_US
dc.rights.holderSCOPUSen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=36849043149&origin=inwarden_US
dc.subjectChemistryen_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleEffect of interface roughness on the density of states of finite barrier height quantum wellsen_US
dc.typeArticleen_US
dspace.entity.typePublication
mu.datasource.scopushttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=36849043149&origin=inwarden_US

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