Publication:
Cubic Sn from liquid phase epitaxy on InSb

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dc.contributor.authorVittaya Amornkitbamrungen_US
dc.contributor.authorSomphong Chatraphornen_US
dc.contributor.otherMahidol Universityen_US
dc.date.accessioned2018-06-14T09:01:26Z
dc.date.available2018-06-14T09:01:26Z
dc.date.issued1987-01-01en_US
dc.description.abstractIslets of α-Sn have been epitaxially grown by the dipping liquid phase epitaxy (LPE) technique on (111)B InSb substrates in Sn/Hg melt at 12.5°C. The α-Sn phase is stable to approximately 60°C, which is comparable to the results obtained by molecular beam epitaxy (MBE) and evaporation in UHV techniques reported earlier by other workers. © 1987.en_US
dc.identifier.citationJournal of Crystal Growth. Vol.84, No.2 (1987), 326-328en_US
dc.identifier.doi10.1016/0022-0248(87)90149-7en_US
dc.identifier.issn00220248en_US
dc.identifier.other2-s2.0-45949116454en_US
dc.identifier.urihttps://repository.li.mahidol.ac.th/handle/123456789/15329
dc.rightsMahidol Universityen_US
dc.rights.holderSCOPUSen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=45949116454&origin=inwarden_US
dc.subjectChemistryen_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleCubic Sn from liquid phase epitaxy on InSben_US
dc.typeLetteren_US
dspace.entity.typePublication
mu.datasource.scopushttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=45949116454&origin=inwarden_US

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