Publication:
Flipped voltage follower ISFET readout circuits

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dc.contributor.authorSurachoke Thanapitaken_US
dc.contributor.authorChutham Sawigunen_US
dc.contributor.otherMahidol Universityen_US
dc.contributor.otherMahanakorn University of Technologyen_US
dc.date.accessioned2018-12-11T02:47:35Z
dc.date.accessioned2019-03-14T08:01:28Z
dc.date.available2018-12-11T02:47:35Z
dc.date.available2019-03-14T08:01:28Z
dc.date.issued2016-08-12en_US
dc.description.abstract© 2016 IEEE. ISFET readout circuits based on the flipped voltage follower is proposed. The circuits operate at 0.8 V providing an ability to sense pH linearly from 1 to 13 with 44.5mV/pH sensitivity. In comparison with relevant literature, the proposed circuits are the most power-efficient.en_US
dc.identifier.citation2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. (2016)en_US
dc.identifier.doi10.1109/ISNE.2016.7543382en_US
dc.identifier.other2-s2.0-84985931201en_US
dc.identifier.urihttps://repository.li.mahidol.ac.th/handle/20.500.14594/40599
dc.rightsMahidol Universityen_US
dc.rights.holderSCOPUSen_US
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84985931201&origin=inwarden_US
dc.subjectEngineeringen_US
dc.subjectMaterials Scienceen_US
dc.titleFlipped voltage follower ISFET readout circuitsen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
mu.datasource.scopushttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84985931201&origin=inwarden_US

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