Publication: Study of low power deposition of ITO for top emission oled with facing target and RF sputtering systems
| dc.contributor.author | S. Dangtip | en_US |
| dc.contributor.author | Y. Hoshi | en_US |
| dc.contributor.author | Y. Kasahara | en_US |
| dc.contributor.author | Y. Onai | en_US |
| dc.contributor.author | T. Osotchan | en_US |
| dc.contributor.author | Y. Sawada | en_US |
| dc.contributor.author | T. Uchida | en_US |
| dc.contributor.other | Mahidol University | en_US |
| dc.contributor.other | Tokyo Polytechnic University | en_US |
| dc.date.accessioned | 2018-07-12T02:52:46Z | |
| dc.date.available | 2018-07-12T02:52:46Z | |
| dc.date.issued | 2008-03-01 | en_US |
| dc.description.abstract | Deposition of ITO as top transparent electrode was studied using two deposition systems with and without direct contact to working plasma; namely with conventional RF-magnetron planar (RSS) and pulsed-DC facing target sputtering systems (FTS). Test devices were made on glass substrates and consisted of (from bottom up) ITO/4 Organic Layers/ITO. Depositions were performed at low deposition powers; 30 and 60 watts, to reduce damages by energetic sputtered particles to underlying organic layers. Test devices from both sputtering systems were found to function well. Leakage current density at -5 V reverse bias were relatively constant from 0.3 and 0.4 mA/cm2at 30 W and 60 W in FTS, while the values were found to increase from 0.001 to 0.2mA/cm2at 30 W and 60 W in RSS. © 2008 IOP Publishing Ltd. | en_US |
| dc.identifier.citation | Journal of Physics: Conference Series. Vol.100, No.PART 4 (2008) | en_US |
| dc.identifier.doi | 10.1088/1742-6596/100/4/042011 | en_US |
| dc.identifier.issn | 17426596 | en_US |
| dc.identifier.issn | 17426588 | en_US |
| dc.identifier.other | 2-s2.0-77954336216 | en_US |
| dc.identifier.uri | https://repository.li.mahidol.ac.th/handle/20.500.14594/19895 | |
| dc.rights | Mahidol University | en_US |
| dc.rights.holder | SCOPUS | en_US |
| dc.source.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77954336216&origin=inward | en_US |
| dc.subject | Physics and Astronomy | en_US |
| dc.title | Study of low power deposition of ITO for top emission oled with facing target and RF sputtering systems | en_US |
| dc.type | Conference Paper | en_US |
| dspace.entity.type | Publication | |
| mu.datasource.scopus | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77954336216&origin=inward | en_US |