Publication: A modified voltage-clamped ISFET readout circuit for low voltage applications
Issued Date
2017-11-03
Resource Type
Other identifier(s)
2-s2.0-85039916773
Rights
Mahidol University
Rights Holder(s)
SCOPUS
Bibliographic Citation
ECTI-CON 2017 - 2017 14th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology. (2017), 135-138
Suggested Citation
Surachoke Thanapitak, Chutham Sawigun A modified voltage-clamped ISFET readout circuit for low voltage applications. ECTI-CON 2017 - 2017 14th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology. (2017), 135-138. doi:10.1109/ECTICon.2017.8096191 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/42249
Research Projects
Organizational Units
Authors
Journal Issue
Thesis
Title
A modified voltage-clamped ISFET readout circuit for low voltage applications
Author(s)
Other Contributor(s)
Abstract
© 2017 IEEE. This paper present an ISFET readout circuit which is operated at 0.8 V supply and senses pH on both current and voltage accurately. This readout circuit requires one gate-source voltage and two drain-source voltage to operate in the weak inversion region. The power consumption at pH 7 is 2.5 nW. The output voltage of this readout circuit tracks with pH linearly while its current output is the exponential function to pH. The simulation results are conducted on a 0.35μm standard CMOS process.