Publication: Spin-polarized tunneling in a ferromagnetic graphene junction: Interplay between the exchange interaction and the orbital effect of the magnetic field
Issued Date
2011-10-01
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ISSN
13869477
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2-s2.0-80054696777
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Mahidol University
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SCOPUS
Bibliographic Citation
Physica E: Low-Dimensional Systems and Nanostructures. Vol.44, No.1 (2011), 327-332
Suggested Citation
Watchara Liewrian, I. Ming Tang, Rassmidara Hoonsawat Spin-polarized tunneling in a ferromagnetic graphene junction: Interplay between the exchange interaction and the orbital effect of the magnetic field. Physica E: Low-Dimensional Systems and Nanostructures. Vol.44, No.1 (2011), 327-332. doi:10.1016/j.physe.2011.08.035 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/12107
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Title
Spin-polarized tunneling in a ferromagnetic graphene junction: Interplay between the exchange interaction and the orbital effect of the magnetic field
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Abstract
The influence of magnetic vector potential barrier (MVPB) on the spin-polarized transport of massless Dirac particles in ferromagnetic graphene is studied theoretically. The phenomenon of Klein tunneling of relativistic particles across a rectangular potential barrier prevents any of the massless fermions from being confined but they can be electrically confined by quantum dots with integrable dynamics (Bardarson et al., 2009) [36]. Utilization of only the in-plane exchange splitting in the ferromagnetic graphene cannot produce 100% spin polarization. This tunneling can be confined using the magnetic vector potential barrier, which leads to high degree of spin polarization. By combining the orbital effect and the Zeeman interaction in graphene junction, it is found that the junction mimics behavior of half-metallic tunneling junction, in which it acts as a metal to particles of one spin orientation but as an insulator or a semiconductor to those of the opposite orientation. The idea of the half-metallic tunneling junction can provide a source of ∼100% spin-polarized current, which is potentially very useful. Adjustment of the position of the Fermi level in ferromagnetic layer by placing a gate voltage on top of the ferromagnetic layer shows that reverse of the orientation of the completely spin-polarized current passing through the junction is controlled by adjusting the gate voltage. These interesting characteristics should lead to a practical gate voltage controlled spin filtering and spin-polarized switching devices as a perfect spin-polarized electron source for graphene-based spintronics. © 2011 Elsevier B.V. All rights reserved.