Publication: High pressure structural studies of AgInTe<inf>2</inf>
Issued Date
2010-05-11
Resource Type
ISSN
17426596
17426588
17426588
Other identifier(s)
2-s2.0-77951929557
Rights
Mahidol University
Rights Holder(s)
SCOPUS
Bibliographic Citation
Journal of Physics: Conference Series. Vol.215, (2010)
Suggested Citation
T. Bovornratanaraks, K. Kotmool, K. Yoodee, M. I. McMahon, D. Ruffolo High pressure structural studies of AgInTe<inf>2</inf>. Journal of Physics: Conference Series. Vol.215, (2010). doi:10.1088/1742-6596/215/1/012008 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/29951
Research Projects
Organizational Units
Authors
Journal Issue
Thesis
Title
High pressure structural studies of AgInTe<inf>2</inf>
Abstract
The structural phase transformations in the chalcopyrite semiconductor AgInTe2have been studied up to 10 GPa on both pressure increase and decrease. The experiments were conducted using angle-dispersive X-ray diffraction with synchrotron radiation and an image plate. The diffraction patterns of AgInTe2at ambient pressure reveal two coexisting phases: the first has the chalcopyrite structure while the second has a zincblende-like structure. On pressure increase both phases transformed at 3-4 GPa to a cation-disordered orthorhombic structure with spacegroup Cmcm. On pressure decrease, the chalcopyrite phase started to reappear at 0.55 GPa, and the Cmcm phase disappeared completely at ambient pressure. © 2010 IOP Publishing Ltd.