Impact of CIGS, CdS and i – ZnO film thickness, temperature on efficiency enhancement of CIGS solar cells

Abstract

In an attempt to enhance solar light photon to electron transformation proficiency of copper indium gallium selenide (CIGS) solar cells, computational exploration has been accomplished through numerical simulation. The SCAPS program was utilized to simulate enactment of CIGS. The electrical, optical properties of CIGS such as band diagram, current density, recombination current, IPCE and current – voltage efficiency was analyzed. The electrical, physical properties, thicknesses of individual layers comprising CIGS, CdS and ZnO were optimized along with their operating temperature. The CIGS solar cell efficiency analysis was executed and analyzed in the AM1.5 spectrum. The depth of CIGS, CdS and ZnO layers in CIGS solar cell determines the efficiency. The simulated optimization of CIGS properties is encouraging for enhancing the CIGS solar cell proficiency.