Photoluminescence and Electrical Properties of IGZO Thin Films Prepared by Sputtering and Solution Processes
1
Issued Date
2025-01-01
Resource Type
ISSN
17426588
eISSN
17426596
Scopus ID
2-s2.0-105027595131
Journal Title
Journal of Physics Conference Series
Volume
3168
Issue
1
Rights Holder(s)
SCOPUS
Bibliographic Citation
Journal of Physics Conference Series Vol.3168 No.1 (2025)
Suggested Citation
Boonyopakorn N., Khemphet S., Jaisutti R., Osotchan T. Photoluminescence and Electrical Properties of IGZO Thin Films Prepared by Sputtering and Solution Processes. Journal of Physics Conference Series Vol.3168 No.1 (2025). doi:10.1088/1742-6596/3168/1/012013 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/114062
Title
Photoluminescence and Electrical Properties of IGZO Thin Films Prepared by Sputtering and Solution Processes
Author(s)
Author's Affiliation
Corresponding Author(s)
Other Contributor(s)
Abstract
Indium-gallium-zinc-oxide (IGZO) is a semiconducting oxide material with high carrier mobility, and utilized as a thin film transistor. There are two methods normally used to fabricate the IGZO thin films; sputtering and solution techniques. For sputtering technique, the powder mixture of indium oxide (In<inf>2</inf>O<inf>3</inf>), gallium oxide (Ga<inf>2</inf>O<inf>3</inf>) and zinc oxide (ZnO) were grinded and pressed then heat at 1300 °C for 3 hours. The x-rays diffraction pattern of the sintered IGZO disc indicates the crystal structure of IGZO compound. The IGZO disc with a diameter of 3 inches was employed for the target of radio frequency (RF) magneton sputtering (13.56 MHz). The IGZO thin film was prepared on the glass or quartz substates under Ar atmospheric pressure of 5 x 10<sup>-3</sup> mbar at RF power of 60 W for 30 minutes. In addition, the ease fabrication technique of solution process was also conducted to prepare IGZO thin films from the solution mixture of metal precursors dissolved in 2-methoxyethanol at 75 °C for 12 hours to form a partial network of metal-oxygen-metal bonds. Subsequently, the deep ultraviolet was irradiated under nitrogen gas for 2 hours. The high carrier mobility of 0.5 and 10.9 cm<sup>2</sup>/Vs can be achieved for IGZO thin films prepared from sol-gel and sputtering methods, respectively. The photoluminescence excitation was proposed to examine the defect levels in both prepared films, and these spectra can be used to relate to the electric properties of the prepared IGZO films.