Raman signatures of single point defects in hexagonal boron nitride quantum emitters
Issued Date
2026-12-01
Resource Type
eISSN
20573960
Scopus ID
2-s2.0-105026858367
Journal Title
Npj Computational Materials
Volume
12
Issue
1
Rights Holder(s)
SCOPUS
Bibliographic Citation
Npj Computational Materials Vol.12 No.1 (2026)
Suggested Citation
Cholsuk C., Çakan A., Deckert V., Suwanna S., Vogl T. Raman signatures of single point defects in hexagonal boron nitride quantum emitters. Npj Computational Materials Vol.12 No.1 (2026). doi:10.1038/s41524-025-01921-x Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/114356
Title
Raman signatures of single point defects in hexagonal boron nitride quantum emitters
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Corresponding Author(s)
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Abstract
Point defects in solid-state quantum systems are vital for enabling single-photon emission at specific wavelengths, making their precise identification essential for advancing applications in quantum technologies. However, pinpointing the microscopic origins of these defects remains a challenge. In this work, we propose Raman spectroscopy as a robust strategy for defect identification. Using density functional theory, we characterize the Raman signatures of 100 defects in hexagonal boron nitride (hBN) spanning periodic groups III to VI, encompassing around 30,000 phonon modes. Our findings reveal that the local atomic environment plays a pivotal role in shaping the Raman lineshape. Furthermore, we demonstrate that Raman spectroscopy can differentiate defects based on their spin and charge states as well as strain-induced variations. The ability to resolve spin configurations offers a pathway to identifying defects with spins suitable for quantum sensing. Finally, an experimental concept using tip-enhanced Raman spectroscopy has been proposed in this work. Therefore, this study not only provides a comprehensive theoretical database of Raman spectra for hBN defects but also establishes a novel experimental framework to identify point defects. More broadly, our approach offers a universal method for defect identification in any quantum materials with spin configurations specific to any quantum application.