Performance of NiO intercalated rGO nanocomposites for NH<inf>3</inf> sensing at room temperature

dc.contributor.authorSrirattanapibul S.
dc.contributor.authorNakarungsee P.
dc.contributor.authorIssro C.
dc.contributor.authorTang I.M.
dc.contributor.authorThongmee S.
dc.contributor.otherMahidol University
dc.date.accessioned2023-06-18T17:27:31Z
dc.date.available2023-06-18T17:27:31Z
dc.date.issued2022-01-01
dc.description.abstractNiO intercalated reduced graphene oxide nanocomposites (rGO/NiO NC's) with different amounts of NiO nanoparticles (NP's) were fabricated via solvothermal technique. NH3 gas sensors was measured at room temperature. The rGO/NiO NC's appeared uniformly distributed NiO NP's anchored to both sides of the rGO sheets. The NH3 gas sensing performance based on these rGO/NiO NC's exhibited excellent both fast response and recovery times when exposed to 20 – 100 ppm of NH3. In addition, increasing the amount of NiO NP's has an effect to the gas response ability, the response time and recovery time due to the enhancement of the active adsorption sites. Moreover, the 20% rGO/NiO NC's presented a significant gas response of 4.14% to 100 ppm of NH3, taking 290 and 166 s for response time and recovery time, respectively. Besides, the rGO/NiO NC's have an excellent long-term stability. Therefore, the rGO/NiO NC's in this study can be efficiently used for NH3 detection at room temperature. From these results, they showed that the combination of NiO NP's with the rGO would be a promising strategy for enhancing the NH3 sensing performance of metal oxide semiconductor (MOS) based devices at room temperature.
dc.identifier.citationMaterials Science in Semiconductor Processing Vol.137 (2022)
dc.identifier.doi10.1016/j.mssp.2021.106221
dc.identifier.issn13698001
dc.identifier.scopus2-s2.0-85115894196
dc.identifier.urihttps://repository.li.mahidol.ac.th/handle/20.500.14594/85107
dc.rights.holderSCOPUS
dc.subjectMaterials Science
dc.titlePerformance of NiO intercalated rGO nanocomposites for NH<inf>3</inf> sensing at room temperature
dc.typeArticle
mu.datasource.scopushttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85115894196&origin=inward
oaire.citation.titleMaterials Science in Semiconductor Processing
oaire.citation.volume137
oairecerif.author.affiliationKasetsart University
oairecerif.author.affiliationMahidol University
oairecerif.author.affiliationBurapha University

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