Facile Ethylvanillin Passivation for High-Performance CsFA Perovskite Solar Cells in Variable Lighting Environments
Issued Date
2025-08-26
Resource Type
eISSN
26376113
Scopus ID
2-s2.0-105014548080
Journal Title
ACS Applied Electronic Materials
Volume
7
Issue
16
Start Page
7616
End Page
7630
Rights Holder(s)
SCOPUS
Bibliographic Citation
ACS Applied Electronic Materials Vol.7 No.16 (2025) , 7616-7630
Suggested Citation
Singh S., Usulor C.E., Khampa W., Musikpan W., Passatorntaschakorn W., Tipparak P., Seriwattanachai C., Nakajima H., Ngamjarurojana A., Gardchareon A., Kanjanaboos P., Ruankham P., Wongratanaphisan D. Facile Ethylvanillin Passivation for High-Performance CsFA Perovskite Solar Cells in Variable Lighting Environments. ACS Applied Electronic Materials Vol.7 No.16 (2025) , 7616-7630. 7630. doi:10.1021/acsaelm.5c00956 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/111948
Title
Facile Ethylvanillin Passivation for High-Performance CsFA Perovskite Solar Cells in Variable Lighting Environments
Corresponding Author(s)
Other Contributor(s)
Abstract
Carbon-based hybrid halide perovskite solar cells (C-PSCs) have emerged as one of the most attractive photovoltaics due to their exceptional performance and cost-effectiveness. However, defects in the perovskite photoactive layer, particularly undercoordinated Pb<sup>2+</sup>and halide migration, lead to nonradiative recombination, limiting efficiency and stability. Herein, a simple, low-temperature, and cost-effective surface passivation method was employed to mitigate defects in the CsFA-based perovskite surface with 3-ethoxy-4-hydroxybenzaldehye (ethylvanillin: EVL). The –CHO and –OH groups in EVL effectively passivate Pb<sup>2+</sup>defects and suppress I<sup>–</sup>migration, as confirmed by X-ray photoelectron spectroscopy (XPS) and full-range infrared analysis, including mid-infrared region and far-infrared region FIR. This passivation significantly enhances the power conversion efficiency (PCE) of C-PSCs by 9.4% (13.03% to 14.26%) with Spiro-OMeTAD and 11.1% (10.14% to 11.26%) with CuSCN as a hole transporting layer (HTL) under 1 sun illumination and 0.09 cm<sup>2</sup>active area. Notably, CuSCN demonstrates a superior hole extraction with 4.1% V<inf>oc</inf>and 6.5% fill factor gains. Furthermore, unencapsulated C-PSCs with Spiro-OMeTAD devices retain ∼91% of their initial PCE after 2160 h under the ISOS-D-1 protocol and 86% after 80 min under an ISOS-L-1 protocol, demonstrating exceptional stability and reproducibility with EVL at 7.5 mg/mL. Under low-intensity LED illumination (simulating indoor environments), EVL-passivated C-PSCs with Spiro-OMeTAD achieve remarkable PCEs of 28.12%, 28.05%, and 30.65% at 1000, 500, and 200 lx, respectively. These results highlight EVL-passivated C-PSCs as a cost-effective, stable, and high-efficiency solution for both outdoor and indoor photovoltaic applications.