Laser-driven synthesis of GaN nanoparticles for next-generation optoelectronics: from thin-film ablation to enhanced photodetector functionality
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Issued Date
2025-12-01
Resource Type
ISSN
00303992
Scopus ID
2-s2.0-105018855859
Journal Title
Optics and Laser Technology
Volume
192
Rights Holder(s)
SCOPUS
Bibliographic Citation
Optics and Laser Technology Vol.192 (2025)
Suggested Citation
Abutawahina M.S.M., Ng S.S., Wang T.K., Quah H.J., Ahmed N.M., Abdul Malik M.F.I. Laser-driven synthesis of GaN nanoparticles for next-generation optoelectronics: from thin-film ablation to enhanced photodetector functionality. Optics and Laser Technology Vol.192 (2025). doi:10.1016/j.optlastec.2025.114077 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/112721
Title
Laser-driven synthesis of GaN nanoparticles for next-generation optoelectronics: from thin-film ablation to enhanced photodetector functionality
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Abstract
Gallium nitride nanoparticles (GaN-NPs) have attracted interest in next-generation applications of wide bandgap due to their unique structural, optical, and electrical properties. However, the conventional synthesis of GaN-NPs using chemical methods is constrained by harmful and costly chemicals and intricate preparation requirements. Hence, this study emphasizes the green synthesis of GaN-NPs using pulsed laser ablation in liquid (PLAL) as an alternative approach due to its simplicity, convenience, inexpensiveness, easy scalability, low energy requirement, environmental friendliness, and minimum usage of hazardous materials and a simple and effective approach. The grazing incidence X-ray diffraction results confirmed the hexagonal wurtzite structure of the GaN-NPs. Field emission scanning electron microscopy confirmed an average particle size of 55.17 nm. Ultraviolet–visible spectroscopy (UV–Vis) was employed to assess the optical properties, revealing that the band gap energy of the GaN-NPs, measured at 3.42 eV, was similar to that of bulk GaN. Finally, the silver paste (SP)/GaN-NPs/Si-based and SP/Si-based metal–semiconductor-metal (MSM) UV photodetectors (PDs) were fabricated. The results show that the photo-to-dark current ratio of the UV PD with GaN-NPs was enhanced sevenfold due to resonance effect. COMSOL simulations further validated these experimental findings.