Optimizing grading profiles for enhanced photovoltaic performance in CsGeI3-xBrx perovskite devices
Issued Date
2026-01-01
Resource Type
ISSN
00223697
eISSN
18792553
Scopus ID
2-s2.0-105017001641
Journal Title
Journal of Physics and Chemistry of Solids
Volume
208
Rights Holder(s)
SCOPUS
Bibliographic Citation
Journal of Physics and Chemistry of Solids Vol.208 (2026)
Suggested Citation
Kumar M., Malker P., Chaudhary V., Singh B., Dwivedi D.K., Singh M.K., Pundir S.K., Kumar M. Optimizing grading profiles for enhanced photovoltaic performance in CsGeI3-xBrx perovskite devices. Journal of Physics and Chemistry of Solids Vol.208 (2026). doi:10.1016/j.jpcs.2025.113224 Retrieved from: https://repository.li.mahidol.ac.th/handle/123456789/114338
Title
Optimizing grading profiles for enhanced photovoltaic performance in CsGeI3-xBrx perovskite devices
Corresponding Author(s)
Other Contributor(s)
Abstract
The present work explored the environment friendly all-inorganic Cs-based perovskite CsGeI<inf>3-x</inf>Br<inf>x</inf> as prime light active materials in the purposed PSC device. The purposed solar cell heterostructure simulated in SCAPS-1D at room temperature for the cell configuration FTO/ZnO/Graded CsGeI<inf>3-x</inf>Br<inf>x</inf>/Cu<inf>2</inf>O/Au. Further, linear and parabolic grading performed along the depth of absorber CsGeI<inf>3-x</inf>Br<inf>x</inf> by changing the composition (x) of Br from 0 to 3 to enhance the PV performance of the purposed device. The impact of composition (x) variation from 0 to 3, thickness variation from 0.5 to 1.0 μm and bowing factor variation from 0 to 1 on the output parameters obtained under the linear and parabolic grading of the purposed PSC device was extensively investigated and comprehensively analyzed. The effects of series resistance, back contact metal work function and the overall device operating temperature were also extensively studied. The various hole and electron transport layers (HTLs and ETLs) are explored and investigated under both linear and parabolic grading conditions for selecting the appropriate and suitable one. The present detailed investigation and comprehensive analysis of the linear and parabolic graded outcome revealed the superior PV performance. The exceptionally impressive PCE ∼33.42 % at zero series resistance and room temperature condition delivered by the purposed device along with excellent PV parameters V<inf>OC</inf>∼1.33 V, J<inf>SC</inf>∼29.302 mA/cm<sup>2</sup>, FF∼85.34 % for 1 μm thick CsGeI<inf>3-x</inf>Br<inf>x</inf> under the parabolic graded condition.