Theoretical Investigation of Fluorescent Defects in Hexagonal Boron Nitride and Their Applications in Quantum Technologies

Abstract

Optical quantum technologies, especially quantum communication, yield higher potential with a network of many integrated quantum systems. Compatibility among each component is then essential. A single quantum system that can be used for different building blocks is ideal, as it automatically ensures a highly efficient interface between the different components. Fluorescent defects in two-dimensional hexagonal boron nitride (hBN) have been demonstrated to be a promising candidate to fulfil this requirement. This work herein demonstrates the potential of hBN defects for being both quantum emitter and quantum memory. The emission wavelengths of a large number of defects have been characterized. Together with thorough photophysical properties, these defects can be directly compared with experiments. The performance of hBN quantum memory has also been evaluated and provided with an experimental condition to achieve 95% efficiency. For an efficient global quantum network, the rigorous comparison of compatibility between hBN defects and other quantum components has been investigated. This work, therefore, serves as a recipe for generating a universal solid-state quantum system applicable to several components in optical quantum technologies.