Investigation of Double-Layered Pb-Sn Perovskite Absorbers: Formation, Structure, Band Alignment, and Stability
Issued Date
2022-01-27
Resource Type
ISSN
19327447
eISSN
19327455
Scopus ID
2-s2.0-85123918026
Journal Title
Journal of Physical Chemistry C
Volume
126
Issue
3
Start Page
1623
End Page
1634
Rights Holder(s)
SCOPUS
Bibliographic Citation
Journal of Physical Chemistry C Vol.126 No.3 (2022) , 1623-1634
Suggested Citation
Naikaew A., Kumnorkaew P., Wattanathana W., Swe K.Z., Pansa-Ngat P., Amratisha K., Nakajima H., Supruangnet R., Krajangsang T., Sinthiptharakoon K., Sahasithiwat S., Kanjanaboos P. Investigation of Double-Layered Pb-Sn Perovskite Absorbers: Formation, Structure, Band Alignment, and Stability. Journal of Physical Chemistry C Vol.126 No.3 (2022) , 1623-1634. 1634. doi:10.1021/acs.jpcc.1c08811 Retrieved from: https://repository.li.mahidol.ac.th/handle/20.500.14594/84211
Title
Investigation of Double-Layered Pb-Sn Perovskite Absorbers: Formation, Structure, Band Alignment, and Stability
Author's Affiliation
Other Contributor(s)
Abstract
Mixed Pb/Sn halide perovskites have shown wide band gap tunability, allowing these materials to become practical components. Nevertheless, a high density of Sn vacancies and an undesirable oxidation of Sn(II) to Sn(IV), even in the absence of any oxidant species, diminish film performance and air-stability due to recombination losses of charge carriers. More recently, A-site substitution by several organic halide compounds as additives has been engaged to improve film stability through dangling bond passivation. However, exploring the roles of passivation via A-site doping in Pb/Sn perovskites requires a more insightful investigation. Here, we explicate the structural design of 2D perovskite formation on the 2D/3D mixed Pb/Sn perovskite layer and its effects on electronic properties and stability. Surprisingly, we observe that PEAI treatment causes 2D perovskite formation at the interface of the layered perovskite. In situ growth of the 2D perovskite significantly suppresses Sn and I vacancies via Lewis base passivation. With the control of the conversion process, the interfacial 2D establishes on top of the layered perovskite, resulting in valence-band maximum down-shifting, which in turn adjusts the energy level. Remarkably, the crystallinity along with the more preferred (100) orientation is significantly improved by the PEAI treatment. The phase stability under ambient conditions is enhanced as a result of the 2D passivation. Through various characterization methods, the deep investigation of 2D perovskite interfacial formation was carefully engaged, yielding insights highly beneficial for various optoelectronic applications.